ST · FETs & Power MOSFETs · MPN SCT027W65G3-4AG
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| Gate Charge(Qg) | 51nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 136pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+200℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 313W |
| RDS(on) | 39.3mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.229nF |
| Type | N-Channel |
650V 60A 313W Through Hole HiP247-4