ST SCT027H65G3AG

ST · FETs & Power MOSFETs · MPN SCT027H65G3AG

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Specifications

Gate Charge(Qg)48.6nC
Drain to Source Voltage650V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)60A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation300W
RDS(on)39.3mΩ
Reverse Transfer Capacitance (Crss@Vds)17.2pF
Input Capacitance(Ciss)1.277nF

Technical details

650V 60A 300W Surface Mount H2PAK-7

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