ST SCT025W120G3AG

ST · FETs & Power MOSFETs · MPN SCT025W120G3AG

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Specifications

Gate Charge(Qg)73nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)56A
Output Capacitance(Coss)102pF
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation388W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)37mΩ
Number1 N-channel
Input Capacitance(Ciss)1.99nF
TypeN-Channel

Technical details

1.2kV 56A 388W Through Hole HIP-247

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