ST SCT020W120G3-4AG

ST · FETs & Power MOSFETs · MPN SCT020W120G3-4AG

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Specifications

Gate Charge(Qg)121nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)108A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation541W
RDS(on)28mΩ
Reverse Transfer Capacitance (Crss@Vds)13.5pF
Number1 N-channel
Input Capacitance(Ciss)3.465nF
TypeN-Channel

Technical details

1.2kV 108A 541W Through Hole HiP247-4

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