ST SCT020HU120G3AG

ST · FETs & Power MOSFETs · MPN SCT020HU120G3AG

No reviews yet — be the first to review ST SCT020HU120G3AG.

Specifications

Gate Charge(Qg)121nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)140pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation555W
RDS(on)28mΩ
Reverse Transfer Capacitance (Crss@Vds)13.5pF
Number1 N-channel
Input Capacitance(Ciss)3.465nF
TypeN-Channel

Technical details

1.2kV 100A 4.2V 555W 28mΩ 1 N-channel N-Channel HU3PAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs