ST · FETs & Power MOSFETs · MPN SCT018W65G3-4AG
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| Gate Charge(Qg) | 77nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+200℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 398W |
| RDS(on) | 27mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.077nF |
| Type | N-Channel |
650V 55A 398W Through Hole HiP247-4