ST SCT018W65G3-4AG

ST · FETs & Power MOSFETs · MPN SCT018W65G3-4AG

No reviews yet — be the first to review ST SCT018W65G3-4AG.

Specifications

Gate Charge(Qg)77nC
Drain to Source Voltage650V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+200℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation398W
RDS(on)27mΩ
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-channel
Input Capacitance(Ciss)2.077nF
TypeN-Channel

Technical details

650V 55A 398W Through Hole HiP247-4

Related FETs & Power MOSFETs