ST · FETs & Power MOSFETs · MPN SCT018H65G3AG
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| Gate Charge(Qg) | 79.4nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 55A |
| Output Capacitance(Coss) | 184pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 385W |
| RDS(on) | 27mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.124nF |
| Type | N-Channel |
650V 55A 385W Surface Mount H2PAK-7