ST SCT018H65G3AG

ST · FETs & Power MOSFETs · MPN SCT018H65G3AG

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Specifications

Gate Charge(Qg)79.4nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)55A
Output Capacitance(Coss)184pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation385W
RDS(on)27mΩ
Reverse Transfer Capacitance (Crss@Vds)18pF
Number1 N-channel
Input Capacitance(Ciss)2.124nF
TypeN-Channel

Technical details

650V 55A 385W Surface Mount H2PAK-7

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