ST SCT011HU75G3AG

ST · FETs & Power MOSFETs · MPN SCT011HU75G3AG

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Specifications

Output Capacitance(Coss)300pF
Pd - Power Dissipation652W
Drain to Source Voltage750V
Configuration-
Gate Charge(Qg)154nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.2V
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)11.4mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)3.86nF

Technical details

652W 750V 3.2V 11.4mΩ@18V 1 N-channel N-Channel HU3PAK Single FETs, MOSFETs RoHS

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