ST PD85035STR-E

ST · FETs & Power MOSFETs · MPN PD85035STR-E

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Specifications

Drain to Source Voltage40V
Current - Continuous Drain(Id)8A
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))4.6V
Operating Temperature-
Pd - Power Dissipation95W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
Number-
Input Capacitance(Ciss)76pF
Gate Charge(Qg)-
Output Capacitance(Coss)45pF

Technical details

40V 8A 4.6V 95W RF FETs, MOSFETs RoHS

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