ST PD57060S-E

ST · FETs & Power MOSFETs · MPN PD57060S-E

No reviews yet — be the first to review ST PD57060S-E.

Specifications

Drain to Source Voltage65V
Configuration-
Current - Continuous Drain(Id)7A
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))4V
Operating Temperature-
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)83pF
Gate Charge(Qg)-

Technical details

65V 7A 4V 79W 1 N-channel PowerSO-10 RF FETs, MOSFETs RoHS

Related FETs & Power MOSFETs