ST PD57018-E

ST · FETs & Power MOSFETs · MPN PD57018-E

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Specifications

Drain to Source Voltage65V
Current - Continuous Drain(Id)2.5A
TypeN-Channel
RDS(on)760mΩ@10V
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation31.7W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number1 N-channel
Input Capacitance(Ciss)34.5pF
Output Capacitance(Coss)21pF

Technical details

N-Channel 65V 2.5A 31.7W Surface Mount PowerSO-10

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