ST PD55003S-E

ST · FETs & Power MOSFETs · MPN PD55003S-E

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Specifications

Drain to Source Voltage40V
Current - Continuous Drain(Id)2.5A
RDS(on)750mΩ@10V
Gate Threshold Voltage (Vgs(th))-
Operating Temperature-
Pd - Power Dissipation31.7W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
Number1 N-channel
Input Capacitance(Ciss)36pF

Technical details

40V 2.5A 750mΩ@10V 31.7W 1 N-channel PowerSO-10RF RF FETs, MOSFETs RoHS

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