ST PD20015C

ST · FETs & Power MOSFETs · MPN PD20015C

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Specifications

Gate Charge(Qg)-
ConfigurationCommon source
Drain to Source Voltage40V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)35pF
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation93W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)310mΩ@10V
Input Capacitance(Ciss)49pF
TypeN-Channel

Technical details

40V 7A 4.2V 93W 310mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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