ST MJD32CT4

ST · Transistors (BJTs) · MPN MJD32CT4

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation15W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.2V
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 100V 3A 15W Surface Mount DPAK

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