ST MJD127T4

ST · Transistors (BJTs) · MPN MJD127T4

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Specifications

Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff10uA
Vbe On(VBE(on))2.8V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation20W
typePNP
Current - Collector(Ic)8A
Operating Temperature-
Vce Saturation(VCE(sat))4V

Technical details

100V 1000 PNP 8A TO-252-2(DPAK) Single Bipolar Transistors RoHS

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