ST · Transistors (BJTs) · MPN MJD122-1
No reviews yet — be the first to review ST MJD122-1.
| Vbe Saturation(VBE(sat)) | 4.5V |
|---|---|
| Current - Collector Cutoff | 10uA |
| Vbe On(VBE(on)) | 2.8V |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 20W |
| type | NPN |
| Current - Collector(Ic) | 8A |
| Vce Saturation(VCE(sat)) | 4V |
100V 1000 NPN 8A TO-251-3 Single Bipolar Transistors RoHS