ST MJD117T4

ST · Transistors (BJTs) · MPN MJD117T4

No reviews yet — be the first to review ST MJD117T4.

Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)25MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation20W
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))3V
Operating Temperature-

Technical details

100V 1000 PNP 2A DPAK Single Bipolar Transistors RoHS

Related Transistors (BJTs)