ST IRF630

ST · FETs & Power MOSFETs · MPN IRF630

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)9A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 200V 9A 75W Through Hole TO-220

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