ST · Transistors (BJTs) · MPN BUL216
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| Current - Collector Cutoff | 250uA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 800V |
| Emitter-Base Voltage VEBO | 9V |
| DC Current Gain | 12 |
| Pd - Power Dissipation | 90W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor NPN 800V 4A 90W Through Hole TO-220