ST BUL216

ST · Transistors (BJTs) · MPN BUL216

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Specifications

Current - Collector Cutoff250uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO800V
Emitter-Base Voltage VEBO9V
DC Current Gain12
Pd - Power Dissipation90W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 800V 4A 90W Through Hole TO-220

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