ST BUL1102E

ST · Transistors (BJTs) · MPN BUL1102E

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Specifications

Current - Collector Cutoff100uA
Collector - Emitter Voltage VCEO450V
DC Current Gain20
Emitter-Base Voltage VEBO12V
Pd - Power Dissipation70W
ConfigurationHalf Bridge
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 450V 4A 70W Through Hole TO-220

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