ST BD139-16

ST · Transistors (BJTs) · MPN BD139-16

No reviews yet — be the first to review ST BD139-16.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation12.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1.5A 12.5W Through Hole SOT-32-3

Related Transistors (BJTs)