ST 2STR1160

ST · Transistors (BJTs) · MPN 2STR1160

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain560
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))430mV

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 0.5W Surface Mount SOT-23-3

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