SPTECH MJE13007

SPTECH · Transistors (BJTs) · MPN MJE13007

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Specifications

Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain40
Pd - Power Dissipation80W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))3V

Technical details

Bipolar (BJT) Transistor NPN 400V 8A 80W Through Hole TO-220C

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