SPTECH MJ2501

SPTECH · Transistors (BJTs) · MPN MJ2501

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Specifications

Current - Collector Cutoff1mA
Vbe On(VBE(on))3V
Collector - Emitter Voltage VCEO80V
DC Current Gain1000
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation150W
typePNP
Current - Collector(Ic)10A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))400mV

Technical details

80V 1000 PNP 10A TO-3 Single Bipolar Transistors RoHS

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