SPTECH MJ11030

SPTECH · Transistors (BJTs) · MPN MJ11030

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Specifications

Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff5mA
Collector - Emitter Voltage VCEO90V
Emitter-Base Voltage VEBO5V
DC Current Gain18000
Pd - Power Dissipation300W
typeNPN
Current - Collector(Ic)50A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))3.5V

Technical details

90V 18000 NPN 50A TO-3 Single Bipolar Transistors RoHS

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