SPTECH BUT11

SPTECH · Transistors (BJTs) · MPN BUT11

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Specifications

Collector - Emitter Voltage VCEO400V
DC Current Gain35
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation100W
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))1.5V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 400V 5A 100W Through Hole TO-220C

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