SPTECH BU920

SPTECH · Transistors (BJTs) · MPN BU920

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Specifications

Vbe Saturation(VBE(sat))2.5V
Current - Collector Cutoff250uA
Collector - Emitter Voltage VCEO350V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation120W
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))1.8V@7A,140mA
Operating Temperature-65℃~+150℃

Technical details

350V NPN 10A TO-3 Single Bipolar Transistors RoHS

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