SPTECH BU102

SPTECH · Transistors (BJTs) · MPN BU102

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Specifications

Current - Collector Cutoff100uA
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO6V
DC Current Gain120
Pd - Power Dissipation100W
Number1 NPN
typeNPN
Current - Collector(Ic)7A
Operating Temperature-
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor NPN 150V 7A 100W Through Hole TO-3

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