SPTECH 2SD1060

SPTECH · Transistors (BJTs) · MPN 2SD1060

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain280
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation30W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 50V 5A 30MHz 30W Through Hole TO-220C

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