SPTECH 2N5935

SPTECH · Transistors (BJTs) · MPN 2N5935

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain100
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation175W
Number1 NPN
typeNPN
Current - Collector(Ic)30A
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor NPN 80V 30A 30MHz 175W Through Hole TO-3

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