SPTECH 2N5882

SPTECH · Transistors (BJTs) · MPN 2N5882

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Specifications

Current - Collector Cutoff500uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation160W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Vce Saturation(VCE(sat))4V

Technical details

Bipolar (BJT) Transistor NPN 80V 15A 4MHz 160W Through Hole TO-3

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