SPTECH 2N3447

SPTECH · Transistors (BJTs) · MPN 2N3447

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Specifications

Current - Collector Cutoff1mA
Collector - Emitter Voltage VCEO60V
DC Current Gain120
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation115W
Number1 NPN
typeNPN
Current - Collector(Ic)7.5A
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 60V 7.5A 115W Through Hole TO-3

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