SINO-IC SED5852

SINO-IC · FETs & Power MOSFETs · MPN SED5852

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Specifications

Gate Charge(Qg)6.1nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)72pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)90mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)540pF
TypeP-Channel

Technical details

P-Channel 20V 3.2A 1.7W Surface Mount DFN-6-EP(2x2)

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