SINO-IC SED4060GM

SINO-IC · FETs & Power MOSFETs · MPN SED4060GM

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Specifications

Gate Charge(Qg)14.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)942pF
TypeN-Channel

Technical details

N-Channel 40V 60A 65W Surface Mount DFN-8(3x3)

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