SINO-IC SED3080M

SINO-IC · FETs & Power MOSFETs · MPN SED3080M

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.33nF
TypeN-Channel

Technical details

N-Channel 30V 80A 83W Surface Mount DFN-8(3x3)

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