SINO-IC SED3030M

SINO-IC · FETs & Power MOSFETs · MPN SED3030M

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Specifications

Gate Charge(Qg)17.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)680pF
TypeN-Channel

Technical details

N-Channel 30V 30A 40W Surface Mount DFN-8(3x3)

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