SINO-IC SED3022M

SINO-IC · FETs & Power MOSFETs · MPN SED3022M

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Specifications

Gate Charge(Qg)17.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)102pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)71pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)680pF
TypeN-Channel

Technical details

N-Channel 30V 20A 36W Surface Mount DFN-8(3.2x3.2)

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