SINO-IC SED14N65G

SINO-IC · FETs & Power MOSFETs · MPN SED14N65G

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.224nF

Technical details

N-Channel 650V 14A 156W Surface Mount DFN-8(5x6)

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