SINO-IC SED10070GG

SINO-IC · FETs & Power MOSFETs · MPN SED10070GG

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)9.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.4nF
TypeN-Channel

Technical details

N-Channel 100V 70A 170W Surface Mount DFN-8(5x6)

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