SINO-IC SE8N65A

SINO-IC · FETs & Power MOSFETs · MPN SE8N65A

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)38nC@10V
Output Capacitance(Coss)175pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.43nF
TypeN-Channel

Technical details

N-Channel 650V 8A 48W Through Hole TO-220F

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