SINO-IC SE80160G

SINO-IC · FETs & Power MOSFETs · MPN SE80160G

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)810pF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation285W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF
TypeN-Channel

Technical details

N-Channel 80V 160A 285W Surface Mount TO-263

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