SINO-IC SE80100G

SINO-IC · FETs & Power MOSFETs · MPN SE80100G

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)58nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.12nF

Technical details

N-Channel 80V 100A 125W Surface Mount TO-263

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