SINO-IC SE6880

SINO-IC · FETs & Power MOSFETs · MPN SE6880

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Specifications

Gate Charge(Qg)178nC@10V
Drain to Source Voltage68V
Output Capacitance(Coss)960pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.3nF
TypeN-Channel

Technical details

68V Surface Mount TO-263

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