SINO-IC · FETs & Power MOSFETs · MPN SE60130G
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 105A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 5.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.274nF |
60V 105A 2V 125W 5.3mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS