SINO-IC SE4625

SINO-IC · FETs & Power MOSFETs · MPN SE4625

No reviews yet — be the first to review SINO-IC SE4625.

Specifications

Gate Charge(Qg)5.38nC@4.5V;6.56nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)125pF;175pF
Current - Continuous Drain(Id)5.1A;4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV;800mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)95pF;162pF
RDS(on)28mΩ@4.5V;57mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)469pF;673pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array Surface Mount DFN-6L-EP(2x2)

Related FETs & Power MOSFETs