SINO-IC SE40200G

SINO-IC · FETs & Power MOSFETs · MPN SE40200G

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.42nF
Current - Continuous Drain(Id)200A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
RDS(on)1.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)530pF
Number1 N-channel
Input Capacitance(Ciss)5.7nF

Technical details

N-Channel 40V Surface Mount DFN(5x6)

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