SINO-IC SE30P12D

SINO-IC · FETs & Power MOSFETs · MPN SE30P12D

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)745pF
RDS(on)25mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.27nF
TypeP-Channel

Technical details

P-Channel 30V 12A 2W Surface Mount DFN-8(3x3)

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