SINO-IC SE3082G

SINO-IC · FETs & Power MOSFETs · MPN SE3082G

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)7.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)2.33nF
TypeN-Channel

Technical details

N-Channel Array 30V 80A 3.1W Surface Mount DFN-8(5.2x5.6)

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