SINO-IC SE30100B

SINO-IC · FETs & Power MOSFETs · MPN SE30100B

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)308pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.3nF
TypeN-Channel

Technical details

N-Channel 30V 100A 110W Surface Mount TO-252

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