SINO-IC SE2N7002E

SINO-IC · FETs & Power MOSFETs · MPN SE2N7002E

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Specifications

Gate Charge(Qg)600pC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)8pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
TypeN-Channel

Technical details

N-Channel 60V 200mA 0.2W Surface Mount SOT-523-3

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